Using granular film to suppress charge leakage in a single-electron latch.
Physical Review B: Condensed Matter and Materials Physics (2008), 77(7), 075414/1-075414/7.
Operation of single-wall carbon nanotube as a radio frequency single electron transistor.
Nanotechnology (2007), 18(44), 445203/1-445203/5.
Quantum dots in nanoelectronic devices.
Nano and Molecular Electronics Handbook (2007), 8/1-8/23.
Single-electron latch with granular film charge leakage suppressor.
Los Alamos National Laboratory, Preprint Archive, Condensed Matter (2007), 1-21, arXiv:0709.4002v1.
Controlled chemical mechanical polishing of polysilicon and silicon dioxide for single-electron device.
Journal of Vacuum Science & Technology, A: Vacuum, Surfaces, and Films (2007), 25(4), 1034-1037.
Two-dot molecular quantum cellular automata: Electron switching in an array of surface bound mixed-valence complexes.
Abstracts of Papers, 232nd ACS National Meeting, San Francisco, CA, United States, Sept. 10-14, 2006 (2006), INOR-755.
Strong cotunneling suppression in a single-electron transistor with granulated metal film island.
Applied Physics Letters (2006), 89(4), 043511/1-043511/3.
Fabrication technologies for nanoelectro-mechanical systems.
MEMS Handbook (2nd Edition) (2006), 2 13/1-13/23.
Posted 07/28/2008